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07N65C 40002 PK25GB40 1N3020B P8916 FSD210BM ADP3306 LM79L05
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  inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon pnp power transistors 2N5740 description collector-emitter sustaining voltage- : v ceo(sus) = -100v(min.) low collector saturation voltage- : v ce(sat) = -0.5v(max.)@ i c = -5a wide area of safe operation applications designed for general-purpose power amplifier and switching applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-a thermal resistance,junction to ambient 4.56 /w symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -20 a i b base current-continuous -4 a p c collector power dissipation @t c =100 20 w t j junction temperature 150 t stg storage temperature -65~200
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon pnp power transistors 2N5740 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -200ma ; i b = 0 -100 v v ce (sat)-1 collector-emitter saturation voltage i c = -5a; i b = -0.5a -0.5 v v ce (sat)-2 collector-emitter saturation voltage i c = -10a; i b = -2.5a -3.0 v v be( sat ) base-emitter saturation voltage i c = -5a; i b = -0.5a -1.2 v v be( on ) base-emitter on voltage i c = -4a; v ce = -4v -1.5 v i ceo collector cutoff current v ce = -100v; i b = 0 -0.5 ma i cbo collector cutoff current v cb = -100v; i e = 0 -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.1 ma h fe-1 dc current gain i c = -5a; v ce = -5v 20 80 h fe-2 dc current gain i c = -10a; v ce = -5v 4 f t current-gain bandwidth product i c = -0.5a; v ce = -10v 10 mhz


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